Journal: Nanoscale Advances
Article Title: Critical role of precursor flux in modulating nucleation density in 2D material synthesis revealed by a digital twin †
doi: 10.1039/d5na00202h
Figure Lengend Snippet: Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
Article Snippet: We create a COMSOL Multiphysics© finite element model by accounting for fluid flow dynamics, evaporation of chalcogen and metal oxide precursors, realistic substrate geometries, and temperature profiles.
Techniques: Labeling, Insulation, Microscopy